Semiconductor device and method of manufacturing the same

ABSTRACT

In a method for manufacturing a semiconductor device, a gate structure is formed over a channel layer and an isolation insulating layer. A first sidewall spacer layer is formed on a side surface of the gate structure. A sacrificial layer is formed so that an upper portion of the gate structure with the first sidewall spacer layer is exposed from the sacrificial layer and a bottom portion of the gate structure with the first sidewall spacer layer is embedded in the first sacrificial layer. A space is formed between the bottom portion of the gate structure and the sacrificial layer by removing at least part of the first sidewall spacer layer. After the first sidewall spacer layer is removed, an air gap is formed between the bottom portion of the gate structure and the sacrificial layer by forming a second sidewall spacer layer over the gate structure.

This application claims priority of Provisional Application No.62/551,669 filed on Aug. 29, 2017, the entire contents of which areincorporated herein by reference.

TECHNICAL FIELD

The disclosure relates to methods of manufacturing semiconductorintegrated circuits, and more particularly to a method of manufacturingsemiconductor devices including fin field effect transistors (FinFETs),and semiconductor devices.

BACKGROUND

As the semiconductor industry introduces new generations of integratedcircuits (ICs) having higher performance and greater functionality, thedensity of the elements that form the ICs is increased, while thedimensions and spacing between components or elements of the ICs arereduced, which causes a variety of problems. For example, for any twoadjacent conductive features, when the distance between the conductivefeatures decreases, the resulting capacitance (parasitic capacitance)increases. The increased capacitance results in an increase of powerconsumption and an increase in the resistive-capacitive (RC) timeconstant, i.e., an increase of signal delays. The capacitance betweentwo adjacent conductive features is a function of the dielectricconstant (k value) of an insulating material filled in the space betweenthe conductive features (also, a function of a distance between theconductive features and a size of the side surfaces of the conductivefeatures). Therefore, the continuing improvement in semiconductor ICperformance and functionality is dependent upon developing insulating(dielectric) materials with low k values. Since the substance with thelowest dielectric constant is air (k=1.0), air-gaps are formed tofurther reduce the effective k value of conductive layers.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1A illustrates a perspective view of a semiconductor device havingair gaps adjacent to a gate electrode in accordance with an embodimentof the present disclosure. FIGS. 1B and 1C illustrate mixed views of across sectional view and a side view of a semiconductor device havingair gaps adjacent to a gate electrode in accordance with an embodimentof the present disclosure. FIG. 1D is an enlarged view corresponding toarea A1 of FIG. 1B.

FIGS. 2A-2C illustrate various stages of a semiconductor devicefabrication process in accordance with an embodiment of the presentdisclosure. FIG. 2A shows a plan (top) view, FIG. 2B shows a crosssectional view corresponding to line X1-X1 of FIG. 2A, and FIG. 2C showsa cross sectional view corresponding to line Y1-Y1 of FIG. 2A.

FIG. 3A illustrates one of the various stages of a semiconductor devicefabrication process in accordance with an embodiment of the presentdisclosure.

FIG. 3B illustrates one of the various stages of a semiconductor devicefabrication process in accordance with an embodiment of the presentdisclosure.

FIG. 3C illustrates one of the various stages of a semiconductor devicefabrication process in accordance with an embodiment of the presentdisclosure.

FIG. 3D illustrates one of the various stages of a semiconductor devicefabrication process in accordance with an embodiment of the presentdisclosure.

FIG. 3E illustrates one of the various stages of a semiconductor devicefabrication process in accordance with an embodiment of the presentdisclosure.

FIG. 3F illustrates one of the various stages of a semiconductor devicefabrication process in accordance with an embodiment of the presentdisclosure.

FIG. 4A illustrates one of the various stages of a semiconductor devicefabrication process in accordance with an embodiment of the presentdisclosure.

FIG. 4B illustrates one of the various stages of a semiconductor devicefabrication process in accordance with an embodiment of the presentdisclosure.

FIG. 4C illustrates one of the various stages of a semiconductor devicefabrication process in accordance with an embodiment of the presentdisclosure.

FIG. 4D illustrates one of the various stages of a semiconductor devicefabrication process in accordance with an embodiment of the presentdisclosure.

FIG. 4E illustrates one of the various stages of a semiconductor devicefabrication process in accordance with an embodiment of the presentdisclosure.

FIG. 4F illustrates one of the various stages of a semiconductor devicefabrication process in accordance with an embodiment of the presentdisclosure.

FIG. 4G illustrates one of the various stages of a semiconductor devicefabrication process in accordance with an embodiment of the presentdisclosure.

FIG. 4H illustrates one of the various stages of a semiconductor devicefabrication process in accordance with an embodiment of the presentdisclosure.

FIG. 5A illustrates one of the various stages of a semiconductor devicefabrication process in accordance with another embodiment of the presentdisclosure.

FIG. 5B illustrates one of the various stages of a semiconductor devicefabrication process in accordance with another embodiment of the presentdisclosure.

FIG. 5C illustrates one of the various stages of a semiconductor devicefabrication process in accordance with another embodiment of the presentdisclosure.

FIG. 5D illustrates one of the various stages of a semiconductor devicefabrication process in accordance with another embodiment of the presentdisclosure.

FIG. 5E illustrates one of the various stages of a semiconductor devicefabrication process in accordance with another embodiment of the presentdisclosure.

FIG. 5F illustrates one of the various stages of a semiconductor devicefabrication process in accordance with another embodiment of the presentdisclosure.

FIG. 5G illustrates one of the various stages of a semiconductor devicefabrication process in accordance with another embodiment of the presentdisclosure.

FIG. 5H illustrates one of the various stages of a semiconductor devicefabrication process in accordance with another embodiment of the presentdisclosure.

FIG. 6A illustrates one of the various stages of a semiconductor devicefabrication process in accordance with another embodiment of the presentdisclosure.

FIG. 6B illustrates one of the various stages of a semiconductor devicefabrication process in accordance with another embodiment of the presentdisclosure.

FIG. 6C illustrates one of the various stages of a semiconductor devicefabrication process in accordance with another embodiment of the presentdisclosure.

FIG. 6D illustrates one of the various stages of a semiconductor devicefabrication process in accordance with another embodiment of the presentdisclosure.

FIG. 6E illustrates one of the various stages of a semiconductor devicefabrication process in accordance with another embodiment of the presentdisclosure.

FIG. 6F illustrates one of the various stages of a semiconductor devicefabrication process in accordance with another embodiment of the presentdisclosure.

FIG. 6G illustrates one of the various stages of a semiconductor devicefabrication process in accordance with another embodiment of the presentdisclosure.

FIG. 6H illustrates one of the various stages of a semiconductor devicefabrication process in accordance with another embodiment of the presentdisclosure.

FIG. 6I illustrates one of the various stages of a semiconductor devicefabrication process in accordance with another embodiment of the presentdisclosure.

FIG. 7A illustrates one of the various stages of a semiconductor devicefabrication process in accordance with an embodiment of the presentdisclosure.

FIG. 7B illustrates one of the various stages of a semiconductor devicefabrication process in accordance with an embodiment of the presentdisclosure.

FIG. 7C illustrates one of the various stages of a semiconductor devicefabrication process in accordance with an embodiment of the presentdisclosure.

FIG. 7D illustrates one of the various stages of a semiconductor devicefabrication process in accordance with an embodiment of the presentdisclosure.

FIG. 8A illustrates one of the various stages of a semiconductor devicefabrication process in accordance with another embodiment of the presentdisclosure.

FIG. 8B illustrates one of the various stages of a semiconductor devicefabrication process in accordance with another embodiment of the presentdisclosure.

FIG. 8C illustrates one of the various stages of a semiconductor devicefabrication process in accordance with another embodiment of the presentdisclosure.

FIG. 8D illustrates one of the various stages of a semiconductor devicefabrication process in accordance with another embodiment of the presentdisclosure.

DETAILED DESCRIPTION

It is to be understood that the following disclosure provides manydifferent embodiments, or examples, for implementing different featuresof the invention. Specific embodiments or examples of components andarrangements are described below to simplify the present disclosure.These are, of course, merely examples and are not intended to belimiting. For example, dimensions of elements are not limited to thedisclosed range or values, but may depend upon process conditions and/ordesired properties of the device. Moreover, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed interposing the first and second features, suchthat the first and second features may not be in direct contact. Variousfeatures may be arbitrarily drawn in different scales for simplicity andclarity. In the accompanying drawings, some layers/features may beomitted for simplification.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The device may be otherwise oriented (rotated 90 degrees orat other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly. In addition, the term“made of” may mean either “comprising” or “consisting of.” Further, inthe following fabrication process, there may be one or more additionaloperations inbetween the described operations, and the order ofoperations may be changed.

Disclosed embodiments relate to a semiconductor having an air gap in asidewall spacer of a gate electrode of a field effect transistor (FET)and its manufacturing method. In some embodiments, the FET is a finfield-effect transistor (FinFET). The embodiments such as thosedisclosed herein are generally applicable not only to FinFETs but alsoto double-gate, surround-gate, omega-gate or gate-all-around (GAA)transistors, 2-dimensional FET and/or nanowire transistors, or anysuitable device having a gate sidewall spacer.

FIGS. 1A-1D illustrate various views of a semiconductor device having anair gap in accordance with embodiments of the present disclosure. FIG.1A illustrates a perspective view of a semiconductor device having airgaps adjacent to a gate electrode in accordance with an embodiment ofthe present disclosure. FIGS. 1B and 1C illustrate mixed views of across sectional view and a side view of a semiconductor device havingair gaps adjacent to a gate electrode in accordance with an embodimentof the present disclosure. FIG. 1D is an enlarged view corresponding toarea A1 of FIG. 1B. In the following embodiments, there may be one ormore additional elements, such as a layer, a portion, a region or anarea, which may not be illustrated for simplicity.

FIGS. 1A-1D illustrate the structure after various manufacturingoperations to form a FinFET structure are performed. As shown in FIGS.1A-1C, a source/drain structure 60 and a gate 40 including a gateelectrode layer 44 and a gate dielectric layer 42 are formed over asubstrate 10. In FIGS. 1A-1D, the semiconductor device includes thesubstrate 10 having one or more fin structures 20, for example, two finstructures. It is understood that two fin structure is illustrated forpurposes of illustration, but other embodiments may include any numberof fin structures. In some embodiments, one or more dummy fin structuresare formed adjacent to the fin structure of an active FinFET. The finstructures 20 extend in the X direction and protrude from an isolationinsulating layer 30 (shallow trench isolation (STI)) disposed over thesubstrate in the Z direction, while the gate 40 extends in the Ydirection.

The substrate 10 may comprise various doped regions depending on designrequirements (e.g., p-type substrate or n-type substrate). In someembodiments, the doped regions may be doped with p-type or n-typedopants. For example, the doped regions may be doped with p-typedopants, such as boron or BF₂; n-type dopants, such as phosphorus orarsenic; and/or combinations thereof. The doped regions may beconfigured for an n-type FinFET, or alternatively configured for ap-type FinFET.

In some embodiments, the substrate 10 may be made of a suitableelemental semiconductor, such as silicon, diamond or germanium; asuitable alloy or compound semiconductor, such as Group-IV compoundsemiconductors (silicon germanium (SiGe), silicon carbide (SiC), silicongermanium carbide (SiGeC), GeSn, SiSn, SiGeSn), Group III-V compoundsemiconductors (e.g., gallium arsenide (GaAs), indium gallium arsenide(InGaAs), indium arsenide (InAs), indium phosphide (InP), indiumantimonide (InSb), gallium arsenic phosphide (GaAsP), or gallium indiumphosphide (GaInP)), or the like. Further, the substrate 10 may includean epitaxial layer (epi-layer), which may be strained for performanceenhancement, and/or may include a silicon-on-insulator (SOI) structure.

The gate structure 40 is disposed over part of the fin structures 20. Asource/drain epitaxial layer 60 is formed over the fin structures notcovered by the gate structure 40. The gate structure 40 includes a gateelectrode layer 44 and a gate dielectric layer 42. In some embodiments,the gate electrode layer 44 includes a metallic material selected fromthe group consisting of W, Cu, Ti, Ag, Al, TiAl, TiAlN, TaC, TaCN,TaSiN, Mn, Co, Pd, Ni, Re, Ir, Ru, Pt, and Zr. In some embodiments, thegate electrode layer 44 includes a metal selected from a groupconsisting of TiN, WN, TaN, and Ru. Metal alloys such as Ti—Al, Ru—Ta,Ru—Zr, Pt—Ti, Co—Ni and Ni—Ta may be used and/or metal nitrides such asWN_(x), TiN_(x), MoN_(x), TaN_(x), and TaSi_(x)N_(y) may be used. Thegate electrode layer 44 may be formed using a suitable process such asatomic layer deposition (ALD), chemical vapor deposition (CVD), physicalvapor deposition (PVD), plating, or combinations thereof.

In certain embodiments of the present disclosure, the gate electrodelayer 44 includes one or more work function adjustment layers (notshown) disposed on the gate dielectric layer 42. The work functionadjustment layer is made of a conductive material such as a single layerof TiN, TaN, TaAlC, TiC, TaC, Co, Al, TiAl, HfTi, TiSi, TaSi or TiAlC,or a multilayer of two or more of these materials. For the n-channelFinFET, one or more of TaN, TaAlC, TiN, TiC, Co, TiAl, HfTi, TiSi andTaSi is used as the work function adjustment layer, and for thep-channel FinFET, one or more of TiAlC, Al, TiAl, TaN, TaAlC, TiN, TiCand Co is used as the work function adjustment layer.

The gate dielectric layer 42 includes one or more high-k dielectriclayers (e.g., having a dielectric constant greater than 3.9). Forexample, the one or more gate dielectric layers may include one or morelayers of a metal oxide or a silicate of Hf, Al, Zr, combinationsthereof, and multi-layers thereof. Other suitable materials include La,Mg, Ba, Ti, Pb, Zr, in the form of metal oxides, metal alloyed oxides,and combinations thereof. Exemplary materials include MgO_(x),BaTi_(x)O_(y), BaSr_(x)Ti_(y)O_(z), PbTi_(x)O_(y), PbZr_(x)Ti_(y)O_(z),SiCN, SiON, SiN, Al₂O₃, La₂O₃, Ta₂O₃, Y₂O₃, HfO₂, ZrO₂, HfSiON,YGe_(x)O_(y), YSi_(x)O_(y) and LaAlO₃, and the like. The formationmethods of gate dielectric layer 42 include molecular-beam deposition(MBD), ALD, PVD, and the like. In some embodiments, the gate dielectriclayer 42 has a thickness of about 0.5 nm to about 5 nm.

The gate structure 40 further includes sidewall spacer layers 51, asshown in FIG. 1A. The sidewall spacer 51 includes an upper portion 56and a lower portion 53. The lower portion further includes a firstportion 52, a second portion 54 and an airgap 50 disposed between thefirst portion 52 and the second portion 54. The first portion 52 isdisposed closer to the gate electrode 44 than the second portion 54. Theupper portion 56 is approximately the upper 25% of the entire height ofthe sidewall spacers 51, and includes no air gap.

FIG. 1B is a mixed view of a cross sectional view cutting a gatestructure in the X direction but not cutting the fin structure 20 and aside view showing a side face of the source/drain epitaxial layer 60. Asshown in FIG. 1B, the semiconductor device further includes an etch-stoplayer (ESL) 62. The ESL 62 covers the source/drain epitaxial layer 60and is disposed on the isolation insulating layer 30. The ESL disposedon the side faces of the source/drain epitaxial layer 60 is omitted.

As shown in FIG. 1B, the gate structure 40 (or the height of thesidewall spacer layers 51) has height H2 measured from the upper surfaceof the isolation insulating layer 30. The height H1 of the uppermostportion of the air gap measured from the isolation insulating layer 30is about 20-70% of H2, in some embodiments. In other embodiments, H1 isabout 30-60% of H2. As set forth above, the upper portion 56 does nothave air gap. In other words, the semiconductor device of the presentdisclosure generally includes an air gap in a bottom portion of thesidewall spacer.

In some embodiments, H1 is equal to or greater than a height H5 of thesource/drain epitaxial layer 60. In other embodiments, H1 is smallerthan H5.

FIG. 1C shows a gate structure 40 with a gate cap insulating layer 48.In this structure, the sidewall spacers 50 are disposed on sidewalls ofthe gate electrode layer 44 and the gate cap insulating layer 48. Insuch a case, the height H1 of the uppermost portion of the air gapmeasured from the isolation insulating layer 30 is about 20% or more ofthe height H3 of the gate electrode layer 44 measured from the uppersurface of the isolation insulating layer 30, in some embodiments. Insome embodiments, an uppermost portion of the air gap 50 is lower thanan uppermost portion of the gate electrode 44, i.e., H1<H3. In certainembodiments, H1 is about 50-90% of H3.

As shown in FIG. 1D, in some embodiments, a bottom insulating layer 56is disposed between the bottom of the air gap 50 and the isolationinsulating layer 30. The thickness H4 of the bottom insulating layer 56is in a range from about 0.5 nm to about 2.0 nm, in some embodiments. Inother embodiments, the bottom of the air gap 50 is exposed (directlycontacts) to the upper surface of the isolation insulating layer 30. Thewidth W1 of the airgap (the largest width in the X direction) is in arange from about 0.5 nm to about 8.0 nm, in some embodiments. In otherembodiments, W1 is in a range from about 1.0 nm to about 5.0 nm. The airgap 50 is one continuous space formed in on sidewall spacer and shouldbe distinguished over pores in a porous material. In some embodiments,H1 is in a range from about 10 nm to about 70 nm. The aspect ratio ofthe air gap 50 (H1/W1) is in a range from about 2 to about 200 in someembodiments.

In some embodiments, as shown in FIG. 1C, the cross sectional shape ofthe air gap 50 is a thin oval.

FIGS. 2A-3F illustrate various stages of a semiconductor devicefabrication process in accordance with an embodiment of the presentdisclosure. It is understood that additional operations can be providedbefore, during, and after processes shown by FIGS. 2A-3F, and some ofthe operations described below can be replaced or eliminated, foradditional embodiments of the method. The order of theoperations/processes may be interchangeable. Material, configuration,dimensions and/or processes the same as or similar to the foregoingembodiments described with respect to FIGS. 1A-1D may be employed in thefollowing embodiments, and detailed explanation thereof may be omitted.

FIG. 2A shows a plan (top) view, FIG. 2B shows a cross sectional viewcorresponding to line X1-X1 of FIG. 2A, and FIG. 2C shows a crosssectional view corresponding to line Y1-Y1 of FIG. 2A, which illustratea semiconductor device structure after a polysilicon gate electrode isformed over a channel layer (a fin structure). In some embodiments, thepolysilicon gate electrode is a dummy gate electrode, which issubsequently replaced with a metal gate.

First, fin structures 120 are formed over a substrate 110 using, forexample, a patterning process. The fin structures 120 may be patternedby any suitable method. For example, the fin structures may be patternedusing one or more photolithography processes, includingdouble-patterning or multi-patterning processes. Generally,double-patterning or multi-patterning processes combine photolithographyand self-aligned processes, allowing patterns to be created that have,for example, pitches smaller than what is otherwise obtainable using asingle, direct photolithography process. For example, in one embodiment,a sacrificial layer is formed over a substrate and patterned using aphotolithography process. Spacers are formed alongside the patternedsacrificial layer using a self-aligned process. The sacrificial layer isthen removed, and the remaining spacers, or mandrels, may then be usedto pattern the fin structures.

After the fin structures are formed, an isolation insulating layer 130(STI), is disposed over the fin structures 120 and the substrate 110.Prior to forming the isolation insulating region 130, one or more linerlayers are formed over the substrate 110 and sidewalls of the bottompart of the fin structures 120, in some embodiments. In someembodiments, the liner layers include a first fin liner layer formed onthe substrate 110 and sidewalls of the bottom part of the fin structures120, and a second fin liner layer formed on the first fin liner layer.Each of the liner layers has a thickness between about 1 nm and about 20nm in some embodiments. In some embodiments, the first fin liner layerincludes silicon oxide and has a thickness between about 0.5 nm andabout 5 nm, and the second fin liner layer includes silicon nitride andhas a thickness between about 0.5 nm and about 5 nm. The liner layersmay be deposited through one or more processes such as physical vapordeposition (PVD), chemical vapor deposition (CVD), or atomic layerdeposition (ALD), although any acceptable process may be utilized.

The isolation insulating layer 130 may be made of suitable dielectricmaterials such as silicon oxide, silicon nitride, silicon oxynitride,fluorine-doped silicate glass (FSG), low-k dielectrics such as carbondoped oxides, extremely low-k dielectrics such as porous carbon dopedsilicon dioxide, a polymer such as polyimide, combinations of these, orthe like. In some embodiments, the isolation insulating layer 130 isformed through a process such as CVD, flowable CVD (FCVD), or aspin-on-glass process, although any acceptable process may be utilized.Subsequently, portions of the isolation insulating layer 130 extendingover the top surfaces of the fin structures 120, and portions of theliner layers over the top surfaces of the fin structures 120 are removedusing, for example, an etch process, chemical mechanical polishing(CMP), or the like. Further, the isolation insulating layer 130 isrecessed to expose the upper portion of the fin structures 120. In someembodiments, the isolation insulating layer 130 is recessed using asingle etch processes, or multiple etch processes. In some embodimentsin which the isolation insulating layer 130 is made of silicon oxide,the etch process may be, for example, a dry etch, a chemical etch, or awet cleaning process. For example, the chemical etch may employ afluorine-containing chemical such as dilute hydrofluoric (dHF) acid.Other materials, processes, and dimensions may be used.

After the fin structure 120 is formed, a dummy gate 142 including adummy gate dielectric layer and a dummy gate electrode layer are formedover the exposed fin structure 120, which is subsequently used as achannel layer. The dummy gate dielectric layer and the dummy gateelectrode layer will be subsequently used to define and form thesource/drain regions. In some embodiments, the dummy gate dielectriclayer and the dummy gate electrode layer are formed by depositing andpatterning a dummy dielectric layer formed over the exposed finstructures 120 and a dummy electrode layer over the dummy gatedielectric layer. The dummy dielectric layer may be formed by thermaloxidation, CVD, sputtering, or any other methods known and used in theart for forming a dummy dielectric layer. In some embodiments, the dummydielectric layer may be made of one or more suitable dielectricmaterials such as silicon oxide, silicon nitride, SiCN, SiON, and SiN,low-k dielectrics such as carbon doped oxides, extremely low-kdielectrics such as porous carbon doped silicon dioxide, a polymer suchas polyimide, the like, or a combination thereof. In one embodiment,SiO₂ is used.

Subsequently, the dummy gate electrode layer is formed over the dummygate dielectric layer. In some embodiments, the dummy gate electrodelayer is a conductive material and is selected from a group comprisingamorphous silicon, poly silicon, amorphous germanium, poly germanium,amorphous silicon-germanium, poly silicon-germanium, metallic nitrides,metallic silicides, metallic oxides, and metals. The dummy electrodelayer may be deposited by PVD, CVD, sputter deposition, or othertechniques known and used in the art for depositing conductivematerials. Other materials, conductive and non-conductive, may be used.In one embodiment, polysilicon is used.

A mask pattern may be formed over the dummy gate electrode layer to aidin the patterning. The mask pattern includes a first mask layer 144 anda second mask layer 146 disposed on the first layer 144. The maskpattern includes one or more layers of SiO₂, SiCN, SiON, Al₂O₃, SiN, orother suitable materials. In some embodiments, the first mask layer 144includes SiCN or SiOCN and the second mask layer 146 includes siliconoxide. By using the mask pattern as an etching mask, the dummy electrodelayer is patterned into the dummy gate electrode 142. In someembodiments, the dummy dielectric layer is also patterned to define thedummy gate dielectric layer. Thus, dummy gate structures 140 are formedas shown in FIGS. 2A-2C. The fin structures 120 extend in the Xdirection and the dummy gate structures 140 extend in the Y directionsubstantially perpendicular to the X direction. In FIGS. 2A-2C, two finstructures and two dummy gate structures are illustrated. However, thenumbers of the fin structures and the dummy gate structures are notlimited to two.

FIG. 3A-3F illustrates various stages of a semiconductor devicefabrication process in accordance with an embodiment of the presentdisclosure. FIGS. 3A-3F illustrates a mixed view of a side view from thedirection of Y2 of FIG. 2A and a cross sectional view corresponding toX2-X2 of FIG. 2A. In FIGS. 3A-3F, a region pF for a p-type FinFET and aregion nF for an n-type FinFET sharing the same fin structure 120 areillustrated. However, these regions are not necessarily disposedadjacent to each other. There may be additional features between the twofin structures that may or may not share a fin structure.

As shown in FIG. 3A, fin structures for a p-type FinFET and an n-typeFinFET are formed. Then, a sidewall spacer layer 150 is formed over thedummy gate structures 140, the fin structure 120 and the isolationinsulating layer 130, followed by forming a protective layer 160 overthe sidewall spacer layer 150, as shown in FIG. 3B.

The sidewall spacer layer 150 includes one or more dielectric layers. Inone embodiment, the sidewall spacer layer 150 includes three layers,having a first sub-layer 152 disposed on the dummy gate structure 140, amain layer 154 disposed one the first sub-layer 152, and a secondsub-layer 156 disposed on the main layer 154, as shown in FIG. 4A. Inanother embodiment, the sidewall spacer layer 150 includes two layers,having a first sub-layer 152 disposed on the dummy gate structure 140and a main layer 154 disposed one the first sub-layer 152, as shown inFIG. 5A. In other embodiments, the sidewall spacer layer 150 includesone layer, a main layer 154, as shown in FIG. 6A.

The main layer 154 is made of a different material than the firstsub-layer 152 and the second sub-layer 156. In some embodiments, themain layer 154, the first sub-layer 152 and the second sub-layer 156include silicon oxide, SiN, SiOCN, SiCN, AlO, AlCO or AlCN, or any othersuitable dielectric material. In certain embodiments, the firstsub-layer 152 and the second sub-layer 156 include SiOCN, and the mainlayer 154 includes silicon oxynitride. The thickness of the firstsub-layer 152 is in a range from about 1 nm to about 5 nm, the thicknessof the main layer 154 is in a range from about 2 nm to about 10 nm andthe thickness of the second sub-layer 156 is in a range from about 1 nmto about 5 nm, in some embodiments. Thus, the thickness of the sidewallspacer layer 150 is in a range from about 2 nm to about 25 nm, in someembodiments. In certain embodiments, the total thickness of the sidewallspacer layer 150 is in a range from about 5 nm to about 15 nm. Eachlayer of the sidewall spacer layer 150 can be formed by CVD, PVD or ALD.The protective layer 160 is made of a different material than thesidewall spacer layer 150, and is made of SiN, in some embodiments.

After the protective layer 160 is formed, the p-type FET region pF iscovered by a cover layer 162, as shown in FIG. 3C. The cover layer 162is a photo resist pattern in some embodiments. Then, the protectivelayer 160 and the sidewall spacer layer 150 disposed over thesource/drain regions of the fin structure 120, which is not covered bythe dummy gate structure and cover layer 162, is removed, as shown inFIG. 3D. After that, a source/drain epitaxial layer 170 is formed overthe exposed source/drain regions of the fin structure 120 after coverlayer 162 is removed, as shown in FIG. 3E. After the source/drainepitaxial layer 170 for the p-type FinFET is formed, the protectivelayer 160 in the n-type region are removed, as shown in FIG. 3F. In someembodiments, an n-type source/drain epitaxial layer is also formed forthe n-type FinFET, while the p-type region is covered by the coverlayer(s) as described above.

The materials used for the source/drain epitaxial layer 170 may bevaried for the n-type and p-type FinFETs, such that one type of materialis used for the n-type FinFETs to exert a tensile stress in the channelregion and another type of material for the p-type FinFETs to exert acompressive stress. For example, SiP or SiC may be used to form n-typeFinFETs, and SiGe or Ge may be used to form p-type FinFETs. Othermaterials may be used. In some embodiments, the source/drain epitaxiallayer 170 includes two or more epitaxial layers with differentcompositions and/or different dopant concentrations.

FIGS. 4A-4H illustrate various stages of a semiconductor devicefabrication process in accordance with an embodiment of the presentdisclosure. It is understood that additional operations can be providedbefore, during, and after the processes shown by FIGS. 4A-4H, and someof the operations described below can be replaced or eliminated, foradditional embodiments of the method. The order of theoperations/processes may be interchangeable. Material, configuration,dimensions and/or processes the same as or similar to the foregoingembodiments described with respect to FIGS. 1A-3F may be employed in thefollowing embodiments, and detailed explanation thereof may be omitted.

FIGS. 4A-4H show an embodiment, in which a three-layer sidewall spacerlayer is employed. In FIGS. 4A-4H, three dummy gate structures and twosource/drain epitaxial layers 170 are illustrated, but the configurationis not limited thereto. FIGS. 4A-4H illustrate a mixed view of a sideview and a cross sectional view, similar to FIGS. 3A-3F.

After the source/drain epitaxial layer 170 is formed, an etchingoperation is performed to remove protective layer 160, as shown in FIG.4A.

Then, a contact etch stop layer (CESL) 180 is conformally formed overthe dummy gate structures, as shown in FIG. 4B. In some embodiments, theCESL 180 includes SiN, SiOCN, SiOC or silicon oxide, formed by CVDand/or ALD. In some embodiments, SiN is used as the CESL 180. The CESL180 is also formed over the source/drain epitaxial layer 170 and theisolation insulating layer 130. The thickness of the CESL 180 is in arange from about 1 nm to about 5 nm in some embodiments.

Subsequently, a sacrificial layer 185 is formed over the dummy gatestructures. Then, a planarization operation, such as an etch-backprocess or a CMP process, is performed until the mask layer 144 isexposed, as shown in FIG. 4C. The sacrificial layer 185 includesamorphous silicon, amorphous germanium, amorphous carbon, or adielectric material, such as silicon oxide. A low-k material orspin-on-glass (SOG) is used as the sacrificial layer 185 in someembodiments.

The sacrificial layer 185 is then recessed, by a suitable etchingprocess, to expose the upper portion of the dummy gate structures, asshown in FIG. 4D. In some embodiments, the sacrificial layer 185 is notrecessed enough to expose the CESL 180 on the source/drain epitaxiallayer 170.

Next, as shown in FIG. 4E, the CESL 180 and the second sub-layers 156and the main layers 154 of the sidewall spacer 150 disposed on theexposed upper portions of the dummy gate structures are removed by oneor more suitable etching operations. Further, the main layers 154disposed on the bottom portion of the dummy gate structures are alsoremoved. Since the main layer 154 is made of a different material (e.g.,silicon oxynitride) than the first and second sub-layers 152 and 156(e.g., SiOCN), the main layer 154 can be selectively removed from thesidewall spacer 150. By removing the main layer 154, a space 155 isformed between the first sub-layer 152 and the second sub-layer 156 atthe bottom portion of the dummy gate structure. Since the space 155 isformed at only the bottom portion of the dummy gate structure, the mainlayer 154 can be more easily and completely removed compared with thecase in which a space (or an air gap) is formed at substantially theentire side face of the dummy gate structure.

After the spaces 155 are formed, the spaces 155 are sealed by forming anupper sidewall spacer layer 190, as shown in FIG. 4F. The upper sidewallspacer layer 190 includes SiCN, SiOCN or SiOC, and can be formed by ALDand/or CVD. In some embodiments, the upper sidewall spacer layer 190 ismade of the same material as the first and second sub-layers 152 and156. By forming the upper sidewall spacer layer 190, air gaps 200 areformed as shown in FIG. 4F. In certain embodiments, before the uppersidewall spacer layer 190 is formed, a thin liner layer is conformallyformed inside the spaces 155. The material of the thin layer can be thesame as that of the upper sidewall spacer layer 190. By adjustingdeposition condition, it is possible to fill the upper opening of thespaces 155 faster than forming a layer in the spaces 155.

After the air gaps 200 are formed, anisotropic etching is performed toform upper sidewall spacers 190, as shown in FIG. 4G. Subsequently, thesacrificial layer is removed and then an interlayer dielectric (ILD)layer 205 is formed, as shown in FIG. 4H. The ILD layer 205 includessilicon oxide, SiCN, SiOC, SiCN, or any suitable dielectric material.

FIGS. 5A-5H illustrate various stages of a semiconductor devicefabrication process in accordance with another embodiment of the presentdisclosure. It is understood that additional operations can be providedbefore, during, and after processes shown by FIGS. 5A-5H, and some ofthe operations described below can be replaced or eliminated, foradditional embodiments of the method. The order of theoperations/processes may be interchangeable. Material, configuration,dimensions and/or processes the same as or similar to the foregoingembodiments described with respect to FIGS. 1A-4H may be employed in thefollowing embodiments, and detailed explanation thereof may be omitted.

FIGS. 5A-5H show an embodiment, in which a two-layer sidewall spacerlayer is employed. In FIGS. 5A-5H, three dummy gate structures and twosource/drain epitaxial layers 170 are illustrated, but the configurationis not limited thereto. FIGS. 5A-5H illustrate a mixed view of a sideview and a cross sectional view, similar to FIGS. 3A-4H.

After the source/drain epitaxial layer 170 is formed, an etchingoperation is performed to remove protective layer 160, as shown in FIG.5A.

Then, a contact etch stop layer (CESL) 180 is conformally formed overthe dummy gate structures, as shown in FIG. 5B. In some embodiments, theCESL 180 includes SiN, SiOCN, SiOC or silicon oxide, formed by CVDand/or ALD. In some embodiments, SiN is used as the CESL 180. The CESL180 is also formed over the source/drain epitaxial layer 170 and theisolation insulating layer 130.

Subsequently, a sacrificial layer 185 is formed over the dummy gatestructures. Then, a planarization operation, such as an etch-backprocess or a CMP process, is performed until the first mask layer 144 isexposed, as shown in FIG. 5C. The sacrificial layer 185 includesamorphous silicon, amorphous germanium, amorphous carbon, or adielectric material, such as silicon oxide. A low-k material orspin-on-glass (SOG) may be used as the sacrificial layer 185.

The sacrificial layer 185 is then recessed, by a suitable etchingprocess, to expose the upper portion of the dummy gate structures, asshown in FIG. 5D. In some embodiments, the sacrificial layer 185 is notrecessed enough to expose the CESL 180 on the source/drain epitaxiallayer 170.

Next, as shown in FIG. 5E, the CESL 180 and the main layers 154 of thesidewall spacer 150 disposed on the exposed upper portions of the dummygate structures are removed by one or more suitable etching operations.Further, the main layers 154 disposed on the bottom portion of the dummygate structures are also removed. Since the main layer 154 is made of adifferent material (e.g., silicon oxynitride) than the first sub-layer152 (e.g., SiOCN) and the CESL 180 (e.g., SiN), the main layer 154 canbe selectively removed from the sidewall spacer 150. By removing themain layer 154, a space 155 is formed between the first sub-layer 152and the CESL 180 at the bottom portion of the dummy gate structure.

After the spaces 155 are formed, the spaces 155 are sealed by forming anupper sidewall spacer layer 190, as shown in FIG. 5F. The upper sidewallspacer layer 190 includes SiCN, SiOCN or SiOC, and can be formed by ALDand/or CVD. In some embodiments, the upper sidewall spacer layer 190 ismade of the same material as the first and second sub-layers 152 and156. By forming the upper sidewall spacer layer 190, air gaps 200 areformed as shown in FIG. 5F. In certain embodiments, before the uppersidewall spacer layer 190 is formed, a thin liner layer is conformallyformed inside the spaces 155. The material of the thin layer can be thesame as that of the upper sidewall spacer layer 190.

After the air gaps 200 are formed, anisotropic etching is performed toform upper sidewall spacers 190, as shown in FIG. 5G. Subsequently, thesacrificial layer is removed and then an interlayer dielectric (ILD)layer 205 is formed, as shown in FIG. 5H. The ILD layer 205 includessilicon oxide, SiOC, SiCN, or any suitable dielectric material.

FIGS. 6A-6H illustrate various stages of a semiconductor devicefabrication process in accordance with another embodiment of the presentdisclosure. It is understood that additional operations can be providedbefore, during, and after processes shown by FIGS. 6A-6H, and some ofthe operations described below can be replaced or eliminated, foradditional embodiments of the method. The order of theoperations/processes may be interchangeable. Material, configuration,dimensions and/or processes the same as or similar to the foregoingembodiments described with respect to FIGS. 1A-5H may be employed in thefollowing embodiments, and detailed explanation thereof may be omitted.

FIGS. 6A-6I show an embodiment, in which a one-layer sidewall spacerlayer is employed. In FIGS. 6A-6I, three dummy gate structures and twosource/drain epitaxial layers 170 are illustrated, but the configurationis not limited thereto. FIGS. 6A-6I illustrates a mixed view of a sideview and a cross sectional view, similar to FIGS. 3A-5H.

After the source/drain epitaxial layer 170 is formed, an etchingoperation is performed to remove protective layer 160, as shown in FIG.6A.

Then, a contact etch stop layer (CESL) 180 is conformally formed overthe dummy gate structures, as shown in FIG. 6B. In some embodiments, theCESL 180 includes SiN, SiOCN, SiOC or silicon oxide, formed by CVDand/or ALD. In some embodiments, SiN is used as the CESL 180. The CESL180 is also formed over the source/drain epitaxial layer 170 and theisolation insulating layer 130.

Subsequently, a sacrificial layer 185 is formed over the dummy gatestructures. Then, a planarization operation, such as an etch-backprocess or a CMP process, is performed until the first mask layer 144 isexposed, as shown in FIG. 6C. The sacrificial layer 185 includesamorphous silicon, amorphous germanium, amorphous carbon, or adielectric material, such as silicon oxide. A low-k material orspin-on-glass (SOG) may be used as the sacrificial layer 185.

The sacrificial layer 185 is then recessed, by a suitable etchingprocess, to expose the upper portion of the dummy gate structures, asshown in FIG. 6D. In some embodiments, the sacrificial layer 185 is notrecessed enough to expose the CESL 180 on the source/drain epitaxiallayer 170.

Next, as shown in FIG. 6E, the CESL 180 and the main layers 154 of thesidewall spacer 150 disposed on the exposed upper portions of the dummygate structures are removed by one or more suitable etching operations.Further, the main layers 154 disposed on the bottom portion of the dummygate structures are also removed. Since the main layer 154 is made of adifferent material (e.g., silicon oxynitride) than the CESL 180 (e.g.,SiN), the main layer 154 can be selectively removed. By removing themain layer 154, a space 155 is formed between the dummy gate electrode142 and the CESL 180 at the bottom portion of the dummy gate structure.

In some embodiments, a thin liner layer 192 is conformally formed insidethe spaces 155 and the upper portion of the dummy gate structures, asshown in FIG. 6F. The material of the thin liner layer 192 can be SiOCNor SiOC, and formed by ALD and/or CVD. The thickness of the thin linerlayer 192 is in a range from about 1 nm to about 5 nm, in someembodiments.

Then, the spaces 155 are sealed by forming an upper sidewall spacerlayer 190, as shown in FIG. 6G. The upper sidewall spacer layer 190includes SiCN, SiOCN or SiOC, and can be formed by ALD and/or CVD. Insome embodiments, the upper sidewall spacer layer 190 is made of thesame material as the thin liner layer 192. By forming the upper sidewallspacer layer 190, air gaps 200 are formed as shown in FIG. 6G.

After the air gaps 200 are formed, anisotropic etching is performed toform upper sidewall spacers 190, as shown in FIG. 6H. Subsequently, thesacrificial layer is removed and then an interlayer dielectric (ILD)layer 205 is formed, as shown in FIG. 6I. The ILD layer 205 includessilicon oxide, SiOC, SiCN, or any suitable dielectric material.

FIGS. 7A-7D illustrate various stages of a semiconductor devicefabrication process in accordance with an embodiment of the presentdisclosure. It is understood that additional operations can be providedbefore, during, and after processes shown by FIGS. 7A-7D, and some ofthe operations described below can be replaced or eliminated, foradditional embodiments of the method. The order of theoperations/processes may be interchangeable. Material, configuration,dimensions and/or processes the same as or similar to the foregoingembodiments described with respect to FIGS. 1A-6I may be employed in thefollowing embodiments, and detailed explanation thereof may be omitted.

FIGS. 7A-7D show various stages of forming a metal gate structure byutilizing a gate replacement technology. FIGS. 7A-7D illustrate a mixedview of a side view and a cross sectional view, similar to FIGS. 3A-6I.

After the structure as shown by FIG. 4H, FIG. 5H or FIG. 6I is formed, aplanarization operation, such as CMP, is performed to remove the firstmask layer 144, as shown in FIG. 7A. FIG. 7A shows the case in which thesidewall spacer layer 150 includes three layers. However, the gatereplacement technology describe below is substantially the same for theother cases (two-layer or one-layer sidewall spacer layer), and themetal gate formation operations are explained by using the three-layercase.

Then, the dummy gate 142 (dummy gate electrode and dummy gate dielectriclayer) is removed, thereby forming gate spaces 149, as shown in FIG. 7B.The removal process may include one or more etch processes. For examplein some embodiments, the removal process includes selective etchingusing either dry or wet etching. When dry etching is used, the processgas may include CF₄, CHF₃, NF₃, SF₆, Br₂, HBr, Cl₂, or combinationsthereof. Diluting gases such as N₂, O₂, or Ar may optionally be used.When wet etching is used, the etching solution (etchant) may includeNH₄OH:H₂O₂:H₂O (APM), NH₂OH, KOH, HNO₃:NH₄F:H₂O, and/or the like. Thedummy gate dielectric layer may be removed using a wet etch process,such as a diluted HF acid, may be used. Other processes and materialsmay be used.

Then, a gate dielectric layer 225 and metal gate electrode 220 areformed in the gate spaces, as shown in FIG. 7C. The formation methods ofgate dielectric layer 225 include molecular-beam deposition (MBD), ALD,PVD, and the like. In some embodiments, an interfacial layer (not shown)may be formed prior to forming the gate dielectric layer 225, and thegate dielectric layer 225 is formed over the interfacial layer. Theinterfacial layer helps buffer the subsequently formed high-k dielectriclayer from the underlying semiconductor material. In some embodiments,the interfacial layer is a chemical silicon oxide, which may be formedby chemical reactions. For example, a chemical silicon oxide may beformed using deionized water+ozone (DIO₃), NH₄OH+H₂O₂+H₂O (APM), orother methods. Other embodiments may utilize a different material orprocesses for the interfacial layer. In an embodiment, the interfaciallayer has a thickness of about 0.2 nm to about 1 nm. The gate electrodelayer 220 may be formed using a suitable process such as ALD, CVD, PVD,plating, or combinations thereof. A planarization process, such as aCMP, may be performed to remove excess materials.

In some embodiments, gate cap insulating layers 230 are formed as shownin FIG. 7D. The metal gate electrode 220 and the gate dielectric layer225 are recessed, and then an insulating material layer is formed. Aplanarization process, such as a CMP, is performed to remove excessinsulating material. In some embodiments, the gate cap insulating layerincludes SiO₂, SiCN, SiON, SiN, Al₂O₃, La₂O₃, a combination thereof, orthe like, but other suitable dielectric films may be used.

After forming the metal gate structures, further CMOS processes areperformed to form various features such as additional interlayerdielectric layers, contacts/vias, interconnect metal layers, andpassivation layers, etc.

FIGS. 8A-8D illustrate various stages of a semiconductor devicefabrication process in accordance with an embodiment of the presentdisclosure. It is understood that additional operations can be providedbefore, during, and after the processes shown by FIGS. 8A-8D, and someof the operations described below can be replaced or eliminated, foradditional embodiments of the method. The order of theoperations/processes may be interchangeable. Material, configuration,dimensions and/or processes the same as or similar to the foregoingembodiments described with respect to FIGS. 1A-7D may be employed in thefollowing embodiments, and detailed explanation thereof may be omitted.FIGS. 8A-8D illustrate a mixed view of a side view and a cross sectionalview, similar to FIGS. 3A-7D.

In the foregoing embodiments, the air gaps are formed before the metalgate structure (gate replacement process) is formed. In the followingembodiments, the air gaps are formed after the metal gate structure isformed.

After the structure of FIG. 4B (or FIG. 5B or 6B) is formed, aninterlayer dielectric layer 186 is formed and a planarization operation,such as CMP, is performed to expose the upper surface of the dummy gate142, as shown in FIG. 8A. In some embodiments, the ILD layer 186 can bea sacrificial layer similar to the sacrificial layer 185. FIG. 8A showsthe case in which the sidewall spacer layer 150 includes three layers.However, the operations described below are substantially the same forthe other cases (two-layer or one-layer sidewall spacer layer), and theair gap formation operations are explained by using the three-layercase.

Then, the dummy gate 142 is removed similar to FIG. 7B, and similar toFIG. 7D, a metal gate structure having a gate dielectric layer 226, ametal gate 221 and a gate cap insulating layer 231 is formed, as shownin FIG. 8B.

Next, as shown in FIG. 8C, the CESL 180 and the second sub-layers 156and the main layers 154 of the sidewall spacer 150 disposed on theexposed upper portions of the gate structures are removed by one or moresuitable etching operations, similar to FIG. 4E. Further, the mainlayers 154 disposed on the bottom portion of the dummy gate structuresare also removed. By removing the main layer 154, a space 155 is formedbetween the first sub-layer 152 and the second sub-layer 156 at thebottom portion of the dummy gate structure.

Then, by the operations similar to FIGS. 4F and 4G, the air gaps 200 andthe upper sidewall spacers 190 are formed, as shown in FIG. 8D. If thelayer 185 is an ILD layer, an additional ILD layer is subsequentlyformed on the ILD layer 185. If the layer 185 is a sacrificial layer,the sacrificial layer 185 is removed and a new ILD layer is formed.

After forming the air gaps, further CMOS processes are performed to formvarious features such as additional interlayer dielectric layers,contacts/vias, interconnect metal layers, and passivation layers, etc.

It will be understood that not all advantages have been necessarilydiscussed herein, no particular advantage is required for allembodiments or examples, and other embodiments or examples may offerdifferent advantages.

For example, in the present disclosure, air gaps are formed in thesidewall spacer layers at the bottom portion of the gate electrode, aneffective dielectric constant of the sidewall spacers can be reduced,which can reduce parasitic capacitance. Thus, a high frequencyperformance of the semiconductor device can be improved. Further, theair gap is disposed only at the bottom portion of the gate electrode andthe upper portions of the sidewall spacers do not include an air gap.Accordingly, when a contact is formed on the gate electrode and/or thesource/drain epitaxial layer, even if a misalignment between the contactand the gate electrode and/or the source/drain epitaxial layer occurs,the material of the contact does not penetrate into the air gap.

In accordance with an aspect of the present disclosure, in a method formanufacturing a semiconductor device, a gate structure is formed over achannel layer and an isolation insulating layer. A first sidewall spacerlayer is formed on a side surface of the gate structure. A sacrificiallayer is formed so that an upper portion of the gate structure with thefirst sidewall spacer layer is exposed from the sacrificial layer and abottom portion of the gate structure with the first sidewall spacerlayer is embedded in the first sacrificial layer. A space is formedbetween the bottom portion of the gate structure and the sacrificiallayer by removing at least part of the first sidewall spacer layer.After the first sidewall spacer layer is removed, an air gap is formedbetween the bottom portion of the gate structure and the sacrificiallayer by forming a second sidewall spacer layer over the gate structure.In one or more foregoing or following embodiments, no air gap is formedon a side surface of the upper portion of the gate structure. In one ormore foregoing or following embodiments, a liner layer is further formedover the first sidewall spacer layer, before the sacrificial layer isformed. The space is formed between the liner layer and the bottomportion of the gate structure. In one or more foregoing or followingembodiments, after the air gap is formed, the sacrificial layer isremoved and an interlayer dielectric layer is formed. In one or moreforegoing or following embodiments, the sacrificial layer includes atleast one selected from the group consisting of amorphous silicon,amorphous carbon and amorphous germanium. In one or more foregoing orfollowing embodiments, before the second sidewall spacer layer isformed, a sidewall liner layer is formed at least in the space so as notto completely fill the space. In one or more foregoing or followingembodiments, the first sidewall spacer layer includes SiOCN.

In accordance with another aspect of the present disclosure, in a methodfor manufacturing a semiconductor device, a gate structure is formedover a channel layer of a fin structure and an isolation insulatinglayer. A first sidewall spacer layer is formed on a side surface of thegate structure, the first sidewall spacer layer including a main layer.A liner layer is formed over the first sidewall spacer layer. Asacrificial layer is formed so that an upper portion of the gatestructure with the first sidewall spacer layer and the liner layer isexposed from the sacrificial layer and a bottom portion of the gatestructure with the first sidewall spacer layer and the liner layer isembedded in the first sacrificial layer. A space is formed between thebottom portion of the gate structure and the liner layer by removing themain layer of the first sidewall spacer layer. After the first sidewallspacer layer is removed, an air gap is formed between the bottom portionof the gate structure and the liner layer by forming a second sidewallspacer layer. In one or more foregoing or following embodiments, thesacrificial layer is formed so that the fin structure is also embeddedin the sacrificial layer. In one or more foregoing or followingembodiments, the first sidewall spacer layer further includes one ormore sub-layers, each of which is made of different material than themain layer, one of the one or more sub-layers is formed on the sidesurface of the gate structure, and the space is formed between the oneof the one or more sub-layers disposed on the bottom portion of the gatestructure and the liner layer. In one or more foregoing or followingembodiments, the main layer is thicker or thinner than each of the oneor more sub-layers. In one or more foregoing or following embodiments,the main layer is made of one selected from the group consisting ofsilicon oxide, silicon nitride, SiOCN and an insulating metal oxide. Inone or more foregoing or following embodiments, the one or moresub-layers are made of SiOCN. In one or more foregoing or followingembodiments, the first sidewall spacer layer further includes a firstsub-layer disposed on the gate structure and a second sub-layer, eachwhich is made of different material than the main layer, the main layeris disposed between the first and second sub-layers, and the space isformed between the first sub-layer disposed on the bottom portion of thegate structure and the liner layer. In one or more foregoing orfollowing embodiments, the first sidewall spacer layer consists of themain layer. In one or more foregoing or following embodiments, beforethe second sidewall spacer layer is formed, a sidewall liner layer isfurther formed at least in the space so as not to completely fill thespace. In one or more foregoing or following embodiments, when formingthe space, an upper portion of the liner layer exposed from thesacrificial layer is also removed. In one or more foregoing or followingembodiments, the gate structure is a dummy gate structure, and themethod further includes, after the air gap is formed, forming aninterlayer dielectric layer, removing the dummy gate structure, therebyforming a gate space, and forming a metal gate structure in the gatespace. In one or more foregoing or following embodiments, before formingthe interlayer dielectric layer, the sacrificial layer is removed.

In accordance with another aspect of the present disclosure, in a methodfor manufacturing a semiconductor device, a gate structure is formedover a channel layer of a fin structure and an isolation insulatinglayer. A source epitaxial layer and a drain epitaxial layer are formedover the fin structure not covered by the gate structure. A firstsidewall spacer layer is formed on a side surface of the gate structure.A sacrificial layer is formed so that an upper portion of the gatestructure with the first sidewall spacer layer is exposed from thesacrificial layer and a bottom portion of the gate structure with thefirst sidewall spacer layer and the source and drain epitaxial layersare embedded in the first sacrificial layer. A space is formed betweenthe bottom portion of the gate structure and the sacrificial layer byremoving at least part of the first sidewall spacer layer, such that apart of an upper surface of the isolation insulating layer is exposed tothe space. After the first sidewall spacer layer is removed, an air gapis formed between the bottom portion of the gate structure and thesacrificial layer by forming a second sidewall spacer layer over thegate structure.

In accordance with one aspect of the present disclosure, a semiconductordevice includes a gate electrode disposed over a channel layer and anisolation insulating layer, and sidewall spacer layers disposed onopposing main side surfaces of the gate electrode and over the isolationinsulating layer. The sidewall spacer layers include a lower layer andan upper layer disposed on the lower layer, and the lower layer includesan air gap. In one or more foregoing or following embodiments, the upperlayer includes no air gap. In one or more foregoing or followingembodiments, an uppermost portion of the air gap from the isolationinsulating layer is 20-70% of a height of the sidewall spacer layers. Inone or more foregoing or following embodiments, an uppermost portion ofthe air gap from the isolation insulating layer is 20-90% of a height ofthe gate electrode. In one or more foregoing or following embodiments,the sidewall spacers are made of SiOCN. In one or more foregoing orfollowing embodiments, an insulating layer is disposed between a bottomof the air gap and the isolation insulating layer. In one or moreforegoing or following embodiments, a thickness of the insulating layeris in a range from 0.5 nm to 2.0 nm. In one or more foregoing orfollowing embodiments, the upper layer is made of different materialthan the lower layer. In one or more foregoing or following embodiments,a width of the air gap is in a range from 0.5 nm to 8.0 nm. In one ormore foregoing or following embodiments, the semiconductor devicefurther includes a liner layer disposed on the lower layer. In one ormore foregoing or following embodiments, the liner layer is made ofdifferent material than the lower layer.

In accordance with another aspect of the present application, asemiconductor device includes a gate structure disposed over a channellayer and an isolation insulating layer and having a gate electrodelayer and an insulating cap layer, and sidewall spacer layers disposedon opposing main side surfaces of the gate structure and over theisolation insulating layer. The sidewall spacer layers include a lowerlayer and an upper layer disposed on the lower layer, and the lowerlayer includes an air gap. In one or more foregoing or followingembodiments, the upper layer includes no air gap. In one or moreforegoing or following embodiments, an uppermost portion of the air gapfrom the isolation insulating layer is 20-70% of a height of thesidewall spacer layers. In one or more foregoing or followingembodiments, an uppermost portion of the air gap is lower than anuppermost portion of the gate electrode. In one or more foregoing orfollowing embodiments, the semiconductor device further includes asource epitaxial layer and a drain epitaxial layer, and an uppermostportion of the air gap is equal to or higher than an uppermost portionof the source or drain epitaxial layers. In one or more foregoing orfollowing embodiments, an uppermost portion of the air gap from theisolation insulating layer is 50-90% of a height of the gate electrode.In one or more foregoing or following embodiments, the sidewall spacersare made of SiOCN. In one or more foregoing or following embodiments, awidth of the air gap is in a range from about 0.5 nm to about 8.0 nm.

In accordance with another aspect of the present disclosure, asemiconductor device includes a gate structure disposed over one or morefin structures and an isolation insulating layer in which bottom part ofthe one or more fin structures are embedded, and sidewall spacer layersdisposed on opposing main side surfaces of the gate structure and overthe isolation insulating layer. The sidewall spacer layers include airgaps at a bottom part of the gate structure.

The foregoing outlines features of several embodiments or examples sothat those skilled in the art may better understand the aspects of thepresent disclosure. Those skilled in the art should appreciate that theymay readily use the present disclosure as a basis for designing ormodifying other processes and structures for carrying out the samepurposes and/or achieving the same advantages of the embodiments orexamples introduced herein. Those skilled in the art should also realizethat such equivalent constructions do not depart from the spirit andscope of the present disclosure, and that they may make various changes,substitutions, and alterations herein without departing from the spiritand scope of the present disclosure.

1. A method for manufacturing a semiconductor device, the methodcomprising: forming a gate structure over a channel layer and anisolation insulating layer; forming a first sidewall spacer layer on aside surface of the gate structure; forming a sacrificial layer so thatan upper portion of the gate structure with the first sidewall spacerlayer is exposed from the sacrificial layer and a bottom portion of thegate structure with the first sidewall spacer layer is embedded in thefirst sacrificial layer; forming a space between the bottom portion ofthe gate structure and the sacrificial layer by removing at least partof the first sidewall spacer layer; and after the first sidewall spacerlayer is removed, forming an air gap between the bottom portion of thegate structure and the sacrificial layer by forming a second sidewallspacer layer over the gate structure.
 2. The method of claim 1, whereinno air gap is formed on a side surface of the upper portion of the gatestructure.
 3. The method of claim 1, further comprising forming a linerlayer over the first sidewall spacer layer, before the sacrificial layeris formed, wherein the space is formed between the liner layer and thebottom portion of the gate structure.
 4. The method of claim 1, furthercomprising, after the air gap is formed: removing the sacrificial layer;and forming an interlayer dielectric layer.
 5. The method of claim 1,wherein the sacrificial layer includes amorphous silicon.
 6. The methodof claim 1, further comprising, before the second sidewall spacer layeris formed, forming a sidewall liner layer at least in the space so asnot to completely fill the space.
 7. The method of claim 1, wherein thefirst sidewall spacer layer includes SiOCN.
 8. A method formanufacturing a semiconductor device, the method comprising: forming agate structure over a channel layer of a fin structure and an isolationinsulating layer; forming a first sidewall spacer layer on a sidesurface of the gate structure, the first sidewall spacer layer includinga main layer; forming a liner layer over the first sidewall spacerlayer, forming a sacrificial layer so that an upper portion of the gatestructure with the first sidewall spacer layer and the liner layer isexposed from the sacrificial layer and a bottom portion of the gatestructure with the first sidewall spacer layer and the liner layer isembedded in the first sacrificial layer; forming a space between thebottom portion of the gate structure and the liner layer by removing themain layer of the first sidewall spacer layer; and after the firstsidewall spacer layer is removed, forming an air gap between the bottomportion of the gate structure and the liner layer by forming a secondsidewall spacer layer.
 9. The method of claim 8, wherein the sacrificiallayer is formed so that the fin structure is also embedded in thesacrificial layer.
 10. The method of claim 8, wherein: the firstsidewall spacer layer further includes one or more sub-layers, each ofwhich is made of different material than the main layer, one of the oneor more sub-layers is formed on the side surface of the gate structure,and the space is formed between the one of the one or more sub-layersdisposed on the bottom portion of the gate structure and the linerlayer.
 11. The method of claim 10, wherein the main layer is thickerthan each of the one or more sub-layers.
 12. The method of claim 10,wherein the main layer is made of one selected from the group consistingof silicon oxide, silicon nitride, SiOCN and an insulating metal oxide.13. The method of claim 10, wherein the one or more sub-layers are madeof SiOCN.
 14. The method of claim 8, wherein: the first sidewall spacerlayer further includes a first sub-layer disposed on the gate structureand a second sub-layer, each which is made of different material thanthe main layer, the main layer is disposed between the first and secondsub-layers, and the space is formed between the first sub-layer disposedon the bottom portion of the gate structure and the liner layer.
 15. Themethod of claim 14, further comprising, before the second sidewallspacer layer is formed, forming a sidewall liner layer at least in thespace so as not to completely fill the space.
 16. The method of claim 8,wherein the first sidewall spacer layer consists of the main layer. 17.The method of claim 8, wherein when forming the space, an upper portionof the liner layer exposed from the sacrificial layer is also removed.18. The method of claim 8, wherein: the gate structure is a dummy gatestructure, and the method further comprising, after the air gap isformed: forming an interlayer dielectric layer; removing the dummy gatestructure, thereby forming a gate space; and forming a metal gatestructure in the gate space.
 19. The method of claim 18, wherein beforeforming the interlayer dielectric layer, the sacrificial layer isremoved.
 20. (canceled)
 21. A method for manufacturing a semiconductordevice, the method comprising: forming a gate structure over a channellayer of a fin structure and an isolation insulating layer; forming asource epitaxial layer and a drain epitaxial layer over the finstructure not covered by the gate structure; forming a first sidewallspacer layer on a side surface of the gate structure; forming asacrificial layer so that an upper portion of the gate structure withthe first sidewall spacer layer is exposed from the sacrificial layerand a bottom portion of the gate structure with the first sidewallspacer layer and the source and drain epitaxial layers are embedded inthe first sacrificial layer; forming a space between the bottom portionof the gate structure and the sacrificial layer by removing at leastpart of the first sidewall spacer layer, such that a part of an uppersurface of the isolation insulating layer is exposed to the space; andafter the first sidewall spacer layer is removed, forming an air gapbetween the bottom portion of the gate structure and the sacrificiallayer by forming a second sidewall spacer layer over the gate structure.